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Wafer

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Silicon and SOI Wafer

SOI wafers artificially form a layer of insulation between the surface and the layers to remove the effects from the layers to significantly enhance the machining, efficiency, and efficiency characteristics of the layer of high purity sealant formed on the insulating materials.

Si wafer

  • Size : 2 inch ~ 8 inch
  • Type : P(Boron dopant) / N(Phos, Antimony, Arsenic dopant)
  • Orientation : <100>, <110>, <111>
  • Grade : Dummy, Test, Prime

SOI wafer

  • Dimeter : 2 inch ~ 6 inch
  • Device Thickness : 2 ~ 10 um ± 0.5 um
  • Buried oxide layer : Thermal oxide 0.5 um ~ 4 um ± 5% typical or nm
  • Handle wafer : 200 um ~ Standard thick
  • Flatness : Less than 1 um TTV or ±5%
  • Conductivity type : P type or N type
  • Orientation : <100>, <111>, <110>
  • Resistivity range : 0.001 ~ 10000 ohm-cm or costomers' preference
  • Surface finish : Single or Double Side Polished

Conductive Metal Substrate

Conductive metal foil is an iron-chromium-nickel-based alloy steel containing molybdenum. This addition increases general corrosion resistance, improves resistance to pitting from chloride ion solutions, and provides increased strength at elevated temperatures. Corrosion resistance is improved, particularly against sulfuric, hydrochloric, acetic, formic and tartaric acids; acid sulfates and alkaline chlorides.

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Conductive Metal Foil

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Characteristics of Metal Foil Substrates

  • Thickness : ~ 25 um
  • Flexibility
  • High corrosion resistance
  • Bio-compatibility
  • Robust to high temperature (~700℃)
  • High strength
  • Good machinability
  • Good conductivity